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This laboratory is dedicated to isotropic and anisotropic etching of thin films a by wet and dry processes. Here are located also the facilities for substrate and photolithographic mask surface cleaning.


Film growth



Plasma Enhanced Chemical Vapour Deposition system are used to deposit thin film of:


  • Amorphous silicon
  • Silicon Oxide
  • Silicon Nitride Doped Silicon (n or p type)


Pentacene Evaporator

Pentacene thin films are obtained in high vacuum chamber (pressure 10-7 mbar) having 200C Radak source. The pentacene purity is 99,9%.


Balzer 510 evaporation system

The Evaporation System has an electron beam and a thermal evaporation sources. The ultra high vacuum is obtained by a cryopump APD Cryogenics. Mainly used for thin film metal evaporation (Cr, Ti, Au, Ni, Pd, etc) and then for dielectric (SiOx). It is equipped by a Inficon Quartz for thickness and depo rate control.

VS-40 Sistec Sputtering

Sputtering Sytem equipped with three catode (actually Titanium, Alluminum and Cromium target mounted) able to perform RF and DC sputtering deposition. The pumping system consists in rotary pump and turbomolecular one. The system is able to process up to 12 four inches wafers during the same run and is equipped by a Pfeiffer mass spectrometer.

Printing system


Dimatix is a laboratory benchtop digital ink jet printing system.
  • Sheet substrate scanning "ink jet" deposition system with drop observation, spot location, and variable printing resolution
  • Low cost, user-fillable piezo-based jetting cartridges, a fluid module with syringe filling system 16 nozzles at 254 μm spacing
  • PC-controlled operation, including visual monitoring of ink jetting and printed pattern inspection
Labratest Gravure printing system

Labratester gravure printer is a laboratory printing machine ideal for testing gravure and functional inks and for R&D and pilot applications.


Its main characteristics are:


  • Possibility to print all types of flexible substrates with size up to 210 x 148 mm (A5)
  • Printing size up to 130 x 120 mm
  • Multilayer printing with accurancy and reproducibility < 100 micron
  • Small ink amount per print (about 1 ml)
  • Printing speed up to 35 m/min
  • Metal and glass printing plates
  • Metal and plastic doctor blades
  • Adjustable presser and doctor blade pressure
Thermal processes


Rapid thermal annealing

The RTA is used to heat a silicon wafer to a sufficiently high temperature so that the silicon lattice is reformed. Rapid heating and cooling of the wafer also minimize the effect of particles diffusion. By varying timeand temperature settings on RTA dopant diffusion can be controlled in order to move dopants to a specific depth.


Excimer laser annealing

The excimer laser light (308 nm) is very efficiently absorbed in an ultra-thin amorphous silicon surface layer without heating the underlying substrate. The homogenized excimer laser beam is scanned across the surface. Within the laser pulse duration (approx. 30 ns) the amorphous-silicon layer is rapidly heated and melted. As it cools down the re-crystallization into poly-silicon occurs. Excimer laser induced crystallization of amorphous silicon (a-Si) to low temperature poly-silicon (LTPS) is a pivotal technology for high performance TFT devices, offering excellent resolution and brightness, large angle of view, high pixel refresh rates, and the possibility of display driver circuitry integration on the panel for the next step in the ongoing miniaturization process.


Micro/Nano fabrication