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The activity of material synthesis at IMM Rome has two main objectives:


  • The development of low-dimension structures by using high yield, low-cost and low-temperature growth techniques;
  • The fabrication of inorganic and organic thin films for flexible and large area microelectronics.


The main following activities are:

Plasma Enhanced Chemical Vapor Deposition (PECVD)

PECVD and Electron Cyclotron Resonance(ECR)-PECVD systems: SiH4, H2, N2O, NH3, PH3 B2H6, as process gases.


Scope: growth silicon (Si) based materials: Si nanowires (Si NWs), planar amorphous Si, planar silicon nitride (SiN) and silicon dioxide (SiO2).

Thermal Evaporation

Balzers 510 evaporation system with electron beam and a thermal evaporation sources for the deposition of metals. Custom-made system for evaporation of organics.


Scope: evaporation of standard metal films for microelectronics (Au, Ag, Al, Cr, Ti, Pt, Ni, In etc.), Pentacene and nanowire decoration with metal nanoparticles (Au, and Ag).

TF Sputtering

VS-40 Sistec sputtering sytem equipped with three catode (actually Titanium, Alluminum and Cromium target mounted) able to perform RF and DC sputtering deposition.


Scope: Deposition of thin films of ZnO, ITO and metals.

Laser annealing

Excimer laser light at 308 nm and pulse duration approx. 30 ns.


Scope: Fabrication of polycrystalline Si, polycrystalline Si/Ge alloys, dopant activation by excimer laser irradiation.

Contact person: Annalisa Convertino