INTRODUCTION
This laboratory is dedicated to isotropic and anisotropic etching of thin films a by wet and dry processes. Here are located also the facilities for substrate and photolithographic mask surface cleaning. |
Plasma etching and ashing | ||
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Oxford plasma technology reactive ion etchThe system is equipped with O2, CHF3, CF4, Ar gases to have resist ashing, silicon and silicon dioxide etching. The pumping system is roots-rotative pumps and the RF generator is up to 350 W. |
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Substrate cleaning and polishing | ||
Wet chemical cleaning
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KOH etching | ||
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KOH etchingSilicon wet etching is done by KOH bath. The system has an heater keeping the temperature costant by a water flow around the bath. |
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Wet etching bench | ||
Metal
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Micro/Nano fabrication |