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Type: 
Journal
Description: 
The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200°C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.
Publisher: 
American Institute of Physics
Publication date: 
2 Jun 2008
Authors: 

R Trotta, A Polimeni, M Capizzi, Damiano Giubertoni, Massimo Bersani, G Bisognin, M Berti, S Rubini, F Martelli, L Mariucci, M Francardi, A Gerardino

Biblio References: 
Volume: 92 Issue: 22 Pages: 221901
Origin: 
Applied Physics Letters