The influence of temperature on deuterium (or hydrogen) diffusion in GaAsN is investigated by secondary ion mass spectrometry and photoluminescence (PL). Deuterium incorporation at 200°C leads to an extremely sharp D concentration profile, which decreases by a factor of 10 within 5nm. This has great relevance to the attainment of an in-plane band gap engineering of dilute nitrides as demonstrated by PL in ensembles of artificial GaAsN wires.
American Institute of Physics
2 Jun 2008
Volume: 92 Issue: 22 Pages: 221901
Applied Physics Letters