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GaAsN/GaAsN:H heterostructures were made by an in-plane selective hydrogen incorporation controlled by H-opaque metallic masks. The strain field and hydrogen distributions in GaAsN micro-sized wires thus obtained have been mapped by an all optical procedure that combines micro-Raman scattering and photoreflectance spectroscopy. The strain field is related to the formation of N-H complexes along the hydrogen diffusion profile with an ensuing expansion of the GaAsN lattice whose patterning generates an anisotropic stress in the sample growth plane. These results highlight a powerful non-invasive tool to simultaneously determine both the H diffusion profile and the related strain field distribution.
American Institute of Physics
Publication date: 
5 Nov 2012

M Geddo, E Giulotto, MS Grandi, M Patrini, R Trotta, A Polimeni, M Capizzi, F Martelli, S Rubini

Biblio References: 
Volume: 101 Issue: 19 Pages: 191908
Applied Physics Letters