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Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.
American Institute of Physics
Publication date: 
10 Sep 2012

Stefano Frabboni, Vincenzo Grillo, Gian Carlo Gazzadi, Roberto Balboni, Rinaldo Trotta, Antonio Polimeni, Mario Capizzi, Faustino Martelli, Silvia Rubini, Giulio Guzzinati, Frank Glas

Biblio References: 
Volume: 101 Issue: 11 Pages: 111912
Applied Physics Letters