GaN nanowires are grown on Si(111) as templates for pendeoepitaxial coalescence overgrowth under different V/III ratios by molecular beam epitaxy. The degree of coalescence in the nanowire template increases with decreasing V/III ratio or doping with Mg. The morphology of the GaN nanowire template strongly influences that of the pendeoepitaxial layer after coalescence as well as its optical quality.
International Society for Optics and Photonics
27 Feb 2012
Volume: 8262 Pages: 82620P
Gallium Nitride Materials and Devices VII