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In dilute nitrides [eg, Ga (AsN),(InGa)(AsN)] the formation of stable N-2H-H complexes following H irradiation removes the effects nitrogen has on the optical (ie, refractive index [1]), structural [2], and electronic [3] properties of the material. In particular, H binding to N atoms in GaAs< inf> 1-x N< inf> x leads to an increase in the band gap energy of the N-containing material (∼ 1.33 eV for x= 1% at T= 5 K) up to the value it has in GaAs (1.52 eV at 5 K). Therefore, by allowing H incorporation only in selected ...
Publication date: 
12 Aug 2015

A Gerardino, S Birindelli, JS Wildmann, G Pettinari, L Businaro, Antonio Polimeni, M Capizzi, S Rubini, F Martelli, A Rastelli, R Trotta, M Felici

Biblio References: 
IEEE Computer Society