2006 | Rome UNIT

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

M Cuscunà, L Mariucci, G Fortunato, A Bonfiglietti, A Pecora, A Valletta

2006-09-18

Biblio references: Volume: 89 Issue: 12 Pages: 123506

Origin: Applied physics letters

Manganese-induced growth of GaAs nanowires

Faustino Martelli, Silvia Rubini, Matteo Piccin, Giorgio Bais, Fauzia Jabeen, Silvano De Franceschi, Vincenzo Grillo, Elvio Carlino, Francesco D'Acapito, Federico Boscherini, Stefano Cabrini, Marco Lazzarino, Luca Businaro, Filippo Romanato, Alfonso Franciosi

2006-09-13

Biblio references: Volume: 6 Issue: 9 Pages: 2130-2134

Origin: Nano Letters

Tunable highly birefringent bandgap-guiding liquid-crystal microstructured fibers

Dimitrios C Zografopoulos, Emmanouil E Kriezis, Theodoros D Tsiboukis

2006-09-03

Biblio references: Volume: 24 Issue: 9 Pages: 3427

Origin: Journal of lightwave technology

Self-heating effects in polycrystalline silicon thin film transistors

Antonio Valletta, Alessandro Moroni, Luigi Mariucci, Alessandra Bonfiglietti, Guglielmo Fortunato

2006-08-28

Biblio references: Volume: 89 Issue: 9 Pages: 093509

Origin: Applied physics letters

Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain

G Bisognin, D De Salvador, AV Drigo, E Napolitani, A Sambo, M Berti, A Polimeni, M Felici, M Capizzi, M Güngerich, PJ Klar, G Bais, F Jabeen, M Piccin, S Rubini, F Martelli, Alfonso Franciosi

2006-08-07

Biblio references: Volume: 89 Issue: 6 Pages: 061904

Origin: Applied physics letters

In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors

Marco Felici, Antonio Polimeni, Giancarlo Salviati, Laura Lazzarini, Nicola Armani, Francesco Masia, Mario Capizzi, Faustino Martelli, Marco Lazzarino, Giorgio Bais, Matteo Piccin, Silvia Rubini, Alfonso Franciosi

2006-08-04

Biblio references: Volume: 18 Issue: 15 Pages: 1993-1997

Origin: Advanced Materials

Inside Front Cover: Quantitative Measurement of the Local Surface Potential of π‐Conjugated Nanostructures: A Kelvin Probe Force Microscopy Study (Adv. Funct. Mater. 11/2006)

A Liscio, V Palermo, D Gentilini, F Nolde, K Müllen, P Samorì

2006-07-21

Biblio references: Volume: 16 Issue: 11

Origin: Advanced Functional Materials

Quantitative Measurement of the Local Surface Potential of π‐Conjugated Nanostructures: A Kelvin Probe Force Microscopy Study

Andrea Liscio, Vincenzo Palermo, Desirée Gentilini, Fabian Nolde, Klaus Müllen, Paolo Samorì

2006-07-21

Biblio references: Volume: 16 Issue: 11 Pages: 1407-1416

Origin: Advanced Functional Materials

Defect distribution along single GaN nanowhiskers

Anna Cavallini, Laura Polenta, Marco Rossi, Thomas Richter, Michel Marso, Ralph Meijers, Raffaella Calarco, Hans Lüth

2006-07-12

Biblio references: Volume: 6 Issue: 7 Pages: 1548-1551

Origin: Nano letters

Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 µm

MC Frassanito, M De Giorgi, R Rinaldi, R Cingolani, S Rubini, M Piccin, A Cristofoli, G Bais, F Martelli, E Carlino, Alfonso Franciosi

2006-07-12

Biblio references: Volume: 21 Issue: 8 Pages: 1207

Origin: Semiconductor science and technology

Improved electrical stability in asymmetric fingered polysilicon thin film transistors

Manganese-induced growth of GaAs nanowires

Tunable highly birefringent bandgap-guiding liquid-crystal microstructured fibers

Self-heating effects in polycrystalline silicon thin film transistors

Hydrogen-nitrogen complexes in dilute nitride alloys: Origin of the compressive lattice strain

In‐Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors

Inside Front Cover: Quantitative Measurement of the Local Surface Potential of π‐Conjugated Nanostructures: A Kelvin Probe Force Microscopy Study (Adv. Funct. Mater. 11/2006)

Quantitative Measurement of the Local Surface Potential of π‐Conjugated Nanostructures: A Kelvin Probe Force Microscopy Study

Defect distribution along single GaN nanowhiskers

Microphotoluminescence characterization of alloy fluctuations in InGaAsN/GaAs quantum wells emitting at 1.3 µm

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