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Type: 
Journal
Description: 
Silicon dioxide films have been deposited at temperatures below 270°C in an electron cyclotron resonance (ECR) plasma reactor from O2, SiH4, and He gas mixture. Pinhole density analysis as a function of substrate temperature for different microwave powers was carried out. Films deposited at higher microwave power and at room temperature show defect densities (10MV∕cm and charge trapping at fields >6MV∕cm have been evaluated …
Publisher: 
American Vacuum Society
Publication date: 
17 Mar 2006
Authors: 
Biblio References: 
Volume: 24 Issue: 2 Pages: 280-285
Origin: 
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films