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In dilute-nitride semiconductors, the possibility to selectively passivate N atoms by spatially controlled hydrogen irradiation allows for tailoring the effective N concentration of the host—and, therefore, its electronic and structural properties—with a precision of a few nanometers. In the present work, this technique is applied to the realization of ordered arrays of GaAs 1− x N x/GaAs 1− x N x∶ H wires oriented at different angles with respect to the crystallographic axes of the material. The creation of a strongly anisotropic strain field in the plane of the sample, due to the lattice expansion of the fully hydrogenated regions surrounding the GaAs 1− x N x wires, is directly responsible for the peculiar polarization properties observed for the wire emission. Temperature-dependent polarization-resolved microphotoluminescence measurements, indeed, reveal a nontrivial dependence of the degree of linear polarization on the …
American Physical Society
Publication date: 
22 Dec 2014

Marco Felici, Simone Birindelli, Rinaldo Trotta, Marco Francardi, Annamaria Gerardino, Andrea Notargiacomo, Silvia Rubini, Faustino Martelli, Mario Capizzi, Antonio Polimeni

Biblio References: 
Volume: 2 Issue: 6 Pages: 064007
Physical Review Applied